Retrait de résine et de contaminants des circuits intégrés par gravure de plasma micro-onde. Nettoyage, activation de surface.
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Graveur plasma micro-onde pour retrait de photorésine des circuits intégrés

During manufacturing of integrated circuits ICs it is necessary to perform many deposition and etching steps in order to build the necessary structures. For the definition of the structure, first photo resist is applied to the wafer, then the resist is hardened and illuminated using a photo mask. After development of the resist follows the dedicated process step, deposition or etch. At the end off the process sequence the photo resist has be removed completely (cleaning of the wafer).

Nowadays this is done usually in a dry way, using plasma in a special plasma etcher or dry etcher. For removal or stripping or ashing of the resist a Trion plasma etcher with ECR microwave generator is used. In special cases, also inductively coupled plasma (ICP) can be used. For the descumming of photo resist, oxygen is well suited as a reaction gas, because oxygen reacts easily with polymers and organics under formation of CO2 and water (ashing). An oxygen plasma is generated in which oxygen radicals and O2 ions exist. In order to avoid damage to the IC, the content of radicals should be high (chemical, isotropic dry etching) and the share of ions should be as low as possible (physical, anisotropic etching), because the ions are accelerated towards the wafer by the electrical field in the reactor and cause more damage therefore. In the Trion plasma reactor an auto tune function is installed in order to control the microwave energy and establish optimal conditions. The samples can be heated by the chuck in order to ease the stripping of the photoresist. Plasma etcher for descumming of photoresist are also called plasma asher or photoresist asher or plasma stripper or photoresist stripper.

Apollo

The cost of new photoresist systems has escalated to unreasonable levels. Trion has solved this critical problem. The Apollo is a compact, inexpensive and versatile system, which can handle 100-300mm wafers. By employing both microwave and RF bias power as needed, difficult to remove layers of resist can be removed at low temperatures. This system incorporates the SST-Lightning microwave source, which is both reliable and totally free from typical microwave tuning problems.

Gemini

The asher is also available with two etch chambers and two cassette input/output stations. This version is recommended to larger production lines.

6µm/min etch rate High throughput Low plasma damage Self-tuning

100mm to 300mm wafers Small footprint Competitively priced

Applications and Processes

Photoresist Stripping, Resist Descumming, Ashing

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