Trion Technology est representé de
Crystec Technology Trading GmbH
survol de l'entreprise Plasma gravure de plasma nettoyage décapsulation PECVD Si3N4 Si02 Extrémité
| PECVD - Plasma Enhanced Chemical Vapor Deposition | ||
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Trion Technology est representé de
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English
Deutsch
Francais survol de l'entreprise Plasma gravure de plasma nettoyage décapsulation PECVD Si3N4 Si02 Extrémité |
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In semiconductor technology three methods are used for the deposition of layers on semiconductor wafers:
APCVD. Atmospheric Pressure Chemical Vapor Deposition requires rather high temperatures and is used
only for very few applications like the formation of epitaxial silicon.
LPCVD. Low Pressure Chemical Vapor Deposition is widely used for the deposition of silicon oxide,
nitride and poly-silicon. The process is performed in tube furnaces and requires
also rather high temperatures.
PECVD. Plasma Enhanced Chemical Vapor Deposition is mainly used for the deposition of dielectric films
and passivation films like silicon oxide or nitride or ONO layers at low temperature. It can be also used for
SiC layers of poly-Silicon deposition. The necessary energy for the chemical reaction is not introduced by
heating the whole reaction chamber but just by heated gas or plasma. It is the best method, if dopant diffusion
has to be kept low, wafers have to be treated, which are sensible to high temperature or have been aluminium
metallized already. The thermal budget of the treated wafers stays low with PECVD.
Using an RF generator, the plasma is formed in the reaction chamber. It contains reactive ions and radicals.
The growth of the deposit starts easily because of the activation and cleaning of the surface by the more of
less intense bombarding with ions from the plasma. You get good adhesion and high growth rates.
The properties of the coated layers can be better influenced with PECVD than in simply thermal deposition technique,
because more process parameters can be varied. Important are the adjustment of adhesion, compressive and tensile
stress causing warpage, hydrogen content and density, etchability, etch rate and selectivity in etching, step
coverage as well as stoichiometry (consistence) and cleanliness of the deposited layers, which can be measured
by the refractive index. The maximum thickness of the deposit and the best uniformity of the coating is also
dependent of the PECVD process parameters. Some film properties can be modified also subsequently.
Based on their know how of plasma technology Trion developed a flexible and cost effective PECVD unit which can be used in a stand alone machine Orion with or without loadlock or in a cluster tool Oracle, in which it can be combined with further PECVD chambers or plasma etch moduls.
Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
A standard version (left) and a minilock-Version (right) are available.
The Orion III PECVD system produces production-quality films on a compact, “roll-away” platform. The unique reactor design produces low stress films with excellent step coverage at extremely low power levels. The system meets all safety, facility and process requirements within the laboratory and pilot line production environments. The Orion III has many standard features not typically found on a system so reasonably priced, which is why many users worldwide have made it their PECVD system of choice.
Processes have been thoroughly developed for the deposition of a wide range of dialectric films and materials. The Orion III is being used for deposition of silane and TEOS-based oxides, nitrides, oxynitrides, silicon carbide and amorphous silicon.
Reactor - The cathode and anode are both machined out of single blocks of aluminum. After critical inspection they are hard anodized for protection from process chemistries. The bottom electrode is available in either 200mm or 300mm sizes and can process parts and wafers up to 200mm or 300mm in diameter. Process gases are introduced into the chamber either by an annular ring or a showerhead manifold.
RF Generator -The system comes with a 300 watt, 100 - 400kHz solid state RF generator.
Touch Screen Operator Interface - A color flat panel display with touch screen interface provides the operator with full process information at all times. The software interface guides the operator through each sequence in a logical fashion and gives fingertip control of all process parameters.
PC Process Controller - The PC process controller provides simple and reliable system control. The graphical software package creates programs in block diagram form. Process recipes are stored on the hard drive or can be stored on USB flash drives allowing each operator to maintain individual recipes.
AC Distribution Module - The AC distribution module automatically distributes predefined power quantities to the various internal components. When the Emergency Power Off button is tripped, the RF power is shut off and all valves involved with gas delivery are automatically closed and the machine powers down to a safe standby mode. This system includes separate power controls for the main AC and peripherals.
Automatic Pressure Control - Every Trion system includes a butterfly pressure control valve operated directly by the process controller. This provides independent pressure control separate from all other processing parameters.
Gas Delivery System - State-of-the-art technology is utilized to ensure the utmost integrity and purity. Each reaction chamber accommodates up to eight mass flow controllers and all plumbing utilizes surface mount, C-seal technology or orbital welded VCR fittings.
Safety - The Orion III meets all SEMI S2-93 safety requirements. A third party safety review is available upon request.
Facilities - Facility schematics can be provided upon request.
Pumping Systems - Each reaction chamber requires it’s own pump. Trion can supply these as needed according to your requirements. There are mechanical, dry and turbo pump options available. You may choose to provide your own pump(s) or they can be purchased directly from Trion. All pump options provided by Trion are proven systems chosen to best meet your specific process needs.
Temperature - Bottom electrode temperature can be controlled from 50°C to 400°C using a resistive heater and IR thermo-couple.
High Frequency RF Generator - A 600 watt, 13.56MHz RF generator can be added to give stress control capability.
Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
A very compact, fully automated, vacuum loadlocked plasma system for semiconductor production. Available in either Reactive Ion Etch (RIE) configuration, High Density Inductive Coupled Plasma (HDICP) or Plasma Enhanced Chemical Vapor Deposition (PECVD) configuration. Used for advanced processing of wafers from 3" to 300mm in diameter. Small footprint at an affordable price.
Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
The Oracle III is the smallest and most flexible full production
cluster system on the market. The system consists of a central vacuum
transport (CVT), vacuum cassette elevators and up to four “roll-away”
process reactors. These roll-away process reactors are docked to the
central load-lock and run in production-mode or can be operated
independently. The Oracle III can also be configured for either the
laboratory environment (with single wafer loading) or for full
production (with vacuum cassette elevators).
Because the Oracle III accommodates up to four separate process
chambers, there are many possible process combinations, including
RIE/ICP etch and PECVD. Processes are safely run without atmospheric
contamination since all chambers are vacuum load-locked.
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Central Vacuum Transport - Safe and contamination-free processing requires the process to be isolated from the surrounding environment. The way to do this is with a vacuum load-locked cluster consisting of a robotic arm, load-locked transfer cluster and reactor isolation valve. The central vacuum transport (CVT) comes with a direct drive, pick and place robot. Each CVT can accommodate up to four reaction chambers and up to two vacuum cassette elevators.
Manual Loadlock - The manual load-lock port allows the manual loading of a single wafer for R&D or test wafers.
Vacuum Cassette Elevator - The vacuum cassette elevator (VCE) allows high throughput operation. A cassette is placed in the VCE, which is then evacuated. The elevator will move the cassette into the correct position for wafer extraction by the robot. The Oracle III can have one or two VCE’s plus a manual load port.
Touch Screen Operator Interface - A color flat panel display with touch screen interface provides the operator with full process information at all times. The software guides the operator through each sequence in a logical fashion and gives touch control of all process conditions.
AC Distribution Module - The AC distribution module automatically distributes predefined power quantities to the various internal components. When the Emergency Power Off button is tripped, the RF power is shut off and all valves involved with gas delivery are automatically closed and the machine powers down to a safe standby mode. This system includes separate power controls for the main AC and peripherals.
Reactor - The cathode and anode are both machined out of single blocks of aluminum. After critical inspection they are hard anodized for protection from process chemistries. The bottom electrode is available in either 200mm or 300mm sizes and can process parts and wafers up to 200mm or 300mm in diameter. Process gases are introduced into the chamber either by an annular ring or a showerhead manifold.
Automatic Matching Network - The uniquely designed matching network is built in as an integral part of the bottom electrode assembly to ensure accurate tuning, low transmission loss and virtually no RF radiation outside the network itself. The network uses a phase magnitude sensor and amplifiers to provide instantaneous feedback for quick precise tuning.
RF Generator - The system comes standard with a 600 watt, 13.56 MHz solid state RF generator.
PC Process Controller - The PC process controller provides simple and reliable system control. The graphical software package creates programs in block diagram form. Process recipes are stored on the hard drive or can be stored on USB flash drives allowing each operator to maintain individual recipes.
Automatic Pressure Control - Every Trion system includes a butterfly pressure control valve operated directly by the process controller. This provides independent pressure control separate from all other process parameters.
Gas Delivery System - State-of-the-art technology is utilized to ensure the utmost integrity and purity. Each reaction chamber accommodates up to eight mass flow controllers and all plumbing utilizes surface mount, C-seal technology or orbital welded VCR fittings.
Safety - The system meets all SEMI S2-93 safety requirements. A third party safety review is available upon request.
Facilities - Facility schematics can be provided upon request.
Custom Gas Cabinets - Trion provides remote gas cabinets with self-closing doors, which house gas delivery and purge systems for corrosive or toxic gases controlled by the on-board computer. The system automatically purges the process supply lines with nitrogen when the system is placed in standby mode. This extends the life of the mfc’s, regulators, valves and associated plumbing. Included are automatic “at-the-bottle” shut off valves and stainless steel lecture bottle holders.
Pumping Systems - Each reaction chamber requires its own pump. Trion can supply these as needed according to your requirements. There are mechanical, dry and turbo pump options available. You may choose to provide your own pump(s) or they can be purchased directly from Trion. All pump options provided by Trion are proven systems chosen to best meet your specific process needs.
Temperature Control - For certain processes an external chiller or heater/chiller may be recommended. By controlling the reactor temperature (bottom electrode), process reproducibility is greatly enhanced and the etch by-products more readily volatilized.
Endpoint Detection Systems - Trion offers both optical and laser endpoint detection options which allows the user to measure film thickness changes in-situ during the etch process. These systems are integrated into and controlled by Trion software.
Inductively Coupled Plasma - Trion’s ICP is a proven option for applications requiring a downstream, high-density plasma source. It dramatically reduces radiation damage and contamination from RIE sputtering and greatly increases selectivity to other films. It allows for higher plasma densities as power is transferred into the bulk plasma via the magnetic field resultant from inductive coupling. This enables processing at lower pressure, which has a number of significant benefits. It allows for anisotropy in high aspect ratio structures and reduces micro-loading effects. Trion’s ICP source will result in improved etch rates, profile control, uniformity and selectivity with a dramatic reduction in RIE radiation damage.
Electrostatic Chuck - Maintaining cooler substrate temperatures during etching is often critical. Trion’s electrostatic chuck holds the wafer securely to the chuck by electrostatic forces while flowing a small quantity of helium onto the backside of the wafer, providing greatly enhanced heat transfer.
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