gravure de plasma

For the formation of integrated circuits it is necessary to structure various layers. This can be done by a plasma etcher. Plasma etching of dielectrics, semiconductors and metals is state of the art today. Before etching, a photo resist is deposited on the surface, illuminated through a mask, and developed. The dry etch is then performed so that structured etching is achieved. After the process, the remaining photo resist has to be removed. This is also done in a special plasma etcher, called asher.

For etching, the reactive gas is exited by a high frequent alternating electromagnetic field of 13.56 MHz in a low pressure environment resulting in the formation of reactive ions and radicals. When the ions are accelerated towards the surface of the sample, anisotropic etching is achieved while the reaction of radicals with the sample results in isotropic etching.

For plasma etching in most cases, chlorine or fluorine-chemistry is used for silicon and dielectrics and metals. Oxygen is used for etching polymer materials. For compound semiconductor materials like GaAs or AlGaAs also chlorine chemistry is used frequently. Especially for Indium containing compounds, also methane C H₄ is used as etching gas.

Dry etching allows a reproducible, uniform etching of all materials used in silicon and III-V-semiconductor technology.

Polyimide. There are many varieties of polyimide on the market today. They have different curing properties, solids content, etc. However, they are all hydrocarbons, and most etch readily in oxygen plasmas. This reaction is a simple oxidation of the organics forming CO and water. Very important for the removal of polyimide, is insuring that the polyimide does not over heat during the process. If this occurs the polyimide can carbonize, leave a grass like residue, and be virtually impossible to get off. Reducing the ion bombardment solves this problem; running very low power, and/or "floating" the sample in the plasma, and/or using a hybrid reactor can accomplish this.

Silicon Nitride. Silicon nitride typically comprises the final passivation layer of an IC. It etches readily in plasmas that contains a lot of free fluorine (such as SF₆/O₂ or CF₄/O₂ plasmas. The SF₆ is isotropic by nature. However, in this case, this property is actually advantageous in removing the nitride sidewalls surrounding top metal. During etching SiF₄, SF₂ and nitrogen are formed.

Silicon Dioxide. There are many types of silicon dioxide in use today. They all etch in the same chemistry using CF₄, however the recipes and etch rates vary a little with the type. Typically, highly doped oxides etch faster and oxides with high carbon content etch dirtier. SiF₄ and CO are formed during this process. Silicon dioxide etching is intrinsically anisotropic due to the fact that the strong chemical bond between the silicon and oxygen requires ion bombardment to break.

Aluminum (and other metals). Pure aluminum, by itself, etches readily in a Cl₂ plasma. However, a native oxide layer covers all aluminum films. Pure Cl₂ does not etch this oxide, so BCl₃ is added to increase the amount of sputtering and to scavenge the oxygen in the aluminum oxide layer. An important consideration in aluminum etching is moisture contamination. For this reason, as well as safety considerations, a vacuum load-lock is highly recommended for this application.

Silicon. Polysilicon and also mono-crystalline silicon can be etched anisotropically & isotropically in chlorine gas or with fluorine chemistry, and it is also very selective to oxide. During etching volatile Silicon halogenides are formed.

Compound semiconductors. For compound semiconductors like GaAs, AlGaAs in many cases just chlorine Cl₂, sometimes mixed with Argon is used. Sometimes BCl₃ is added in order to increase anisotropy. Also SiCl₄ can be used as an etchant for those materials. Volantile chlorides are formed like GaCl₃ or AlCl₃ or AsCl₃.

Indium compound semiconductors Because Indium halogenides are not very volatile, for those materials methane can be used, forming volatile Trimethylindium. This reaction works also for other III-V-materials. The main problem with alkane plasmas is the formation of polymer depositions on the wafer. This problem can be avoided or minimized by the addition of hydrogen. Also the addition of heavy atoms like Argon can delay the onset of polymers.

Equipment

You can select between the stand alone unit Phantom (manual loading) or Titan (automatic loading) and a cluster type system Oracle. Additionally, there is as small lab machine Sirus available.
All machines are available as standard RIE (reactive ion etcher), with ICP (inductive coupled plasma) generator or in triode configuration.

Sirus Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
Linie

Phantom III Reactive Ion Etch (RIE) System

A standard version (very left) and a ICP-version (left) are available. Also available is the standard version with a vacuum loadlock (right) and the ICP-version with a vacuum loadlock (very right)
The Phantom III RIE is designed for etching nitrides, oxides and any films or substrates requiring fluorine-based chemistries. It’s modular design, mounted on a space-saving platform, is the system of choice for many users throughout the world.

Processes

Tool Features

Reactor - The cathode and anode are both machined out of single blocks of aluminum. After critical inspection they are hard anodized for protection from process chemistries. The bottom electrode is available in either 200mm or 300mm sizes and can process parts and wafers up to 200mm or 300mm in diameter. Process gases are introduced into the chamber either by an annular ring or showerhead manifold.

Automatic Matching Network - The uniquely designed network is built in as an integral part of the bottom electrode assembly to ensure accurate tuning, low transmission loss and virtually no RF radiation outside the network itself. The network uses a phase magnitude sensor and amplifiers to provide instantaneous feedback for quick precise tuning.

RF Generator - The Phantom III comes with a 600 watt, 13.56 MHz, solid state RF generator. (The Phantom LT comes with a 300 watt RFgenerator).

Touch Screen Operator Interface - A color flat panel display with touch screen interface provides the operator with full process information at all times. The software interface guides the operator through each sequence in a logical fashion and gives fingertip control of all process parameters.

PC Process Controller - The PC process controller provides simple and reliable system control. The graphical software package creates programs in block diagram form. Process recipes are stored on the hard drive or can be stored on USB flash drives allowing each operator to maintain individual recipes.

AC Distribution Module - The AC distribution module automatically distributes predefined power quantities to the various internal components. When the Emergency Power Off button is tripped, the RF power is shut off and all valves involved with gas delivery are automatically closed and the machine automatically powers down to a safe standby mode. This system includes separate power controls for the main AC and peripherals.

Automatic Pressure Control - Every Trion system includes a butterfly pressure control valve operated directly by the process controller. This provides independent pressure control separate from all other processing parameters.

Gas Delivery System - State-of-the-art technology is utilized to ensure the utmost integrity and purity. Each Phantom III reaction chamber accommodates up to eight mass flow controllers and all plumbing utilizes surface mount, C-seal technology or orbital welded VCR fittings. (The Phantom LT comes with two mass flow controllers).

Safety - The system meets all SEMI S2-93 safety requirements. A third party safety review is available upon request.

Tool Advanced Options

Pumping Systems - Each reaction chamber requires it’s own pump. Trion can supply these as needed according to your requirements. There are mechanical, dry and turbo pump options available. You may choose to provide your own pump(s) or they can be purchased directly from Trion. All pump options provided by Trion are proven systems chosen to best meet your specific process needs.

Temperature Control - An external chiller or heater/chiller recirculator may be recommended. By controlling the reactor temperature (bottom electrode), process reproducibility is greatly enhanced and the etch byproducts are more readily volatilized.

Endpoint Detection Systems - Trion offers both optical and laser endpoint detection options which allows the user to measure film thickness changes in-situ during the etch process. These systems are integrated into and controlled by Trion software.

Inductively Coupled Plasma - Trion’s carefully engineered ICP is a proven option for applications requiring a downstream, high-density plasma source. It dramatically reduces radiation damage and contamination from RIE sputtering and greatly increases selectivity to other films. It allows for higher plasma densities as power is transferred into the bulk plasma via the magnetic field resultant from inductive coupling. This enables processing at lower pressure, which has a number of significant benefits. It allows for tight anisotropy in high aspect ratio structures and reduces microloading effect. Trion’s ICP source will result in improved etch rates, profile control, uniformity and selectivity with a dramatic reduction in RIE radiation damage. The Phantom III ICP comes with a 600 or 1250 watt, 13.56 MHz power supply and a built-in automatic matching network. (The Phantom LT ICP comes with a 600 watt power supply.)

Electrostatic Chuck - Maintaining cooler substrate temperatures during etching is often critical. Trion’s electrostatic chuck holds the wafer securely to the chuck by electrostatic forces while flowing a small quantity of helium onto the backside of the wafer, providing significant cooling.

Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
Linie

Titan Reactive Ion Etch System

The Titan System is a version of the Phantom III RIE-System which was designed for usage in production.

A very compact, fully automated, vacuum loadlocked plasma system for semiconductor production. Available in either Reactive Ion Etch (RIE) configuration, High Density Inductive Coupled Plasma (HDICP) or Plasma Enhanced Chemical Vapor Deposition (PECVD) configuration. Used for advanced processing of wafers from 3" to 300mm in diameter. Small footprint at an affordable price.

Key Benefits & Features

Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
Linie

Oracle III Plasma Etch & Deposition System with central handler and load lock

The Oracle III is the smallest and most flexible full production cluster system on the market. The system consists of a central vacuum transport (CVT), vacuum cassette elevators and up to four “roll-away” process reactors. These roll-away process reactors are docked to the central load-lock and run in production-mode or can be operated independently. The Oracle III can also be configured for either the laboratory environment (with single wafer loading) or for full production (with vacuum cassette elevators).
Because the Oracle III accommodates up to four separate process chambers, there are many possible process combinations, including RIE/ICP etch and PECVD. Processes are safely run without atmospheric contamination since all chambers are vacuum load-locked.

Applications

Compound Semiconductor, Photonics, Research & Development, Pilot Line, Production

Processes

Cluster Tool Features

Central Vacuum Transport - Safe and contamination-free processing requires the process to be isolated from the surrounding environment. The way to do this is with a vacuum load-locked cluster consisting of a robotic arm, load-locked transfer cluster and reactor isolation valve. The central vacuum transport (CVT) comes with a direct drive, pick and place robot. Each CVT can accommodate up to four reaction chambers and up to two vacuum cassette elevators.

Manual Loadlock - The manual load-lock port allows the manual loading of a single wafer for R&D, pilot line or to run priority wafers.

Vacuum Cassette Elevator - The vacuum cassette elevator (VCE) allows high throughput, cassette-to-cassette capability for production applications. The Oracle III can have one or two VCE’s plus a manual load port.

Touch Screen Operator Interface - A color flat panel display with touch screen interface provides the operator with full process information at all times. The software guides the operator through each sequence in a logical fashion and gives touch control of all process conditions.

AC Distribution Module - The AC distribution module automatically distributes predefined power quantities to the various internal components. When the Emergency Power Off button is tripped, the RF power is shut off and all valves involved with gas delivery are automatically closed and the machine powers down to a safe standby mode. This system includes separate power controls for the main AC and peripherals.

Roll-Away Tool Features

Automatic Matching Network - The uniquely designed matching network is built in as an integral part of the bottom electrode assembly to ensure accurate tuning, low transmission loss and virtually no RF radiation outside the network itself. The network uses a phase magnitude sensor and amplifiers to provide instantaneous feedback for quick precise tuning.

RF Generator - The system comes standard with a 600 watt, 13.56 MHz solid state RF generator.

Gas Delivery System - State-of-the-art technology is utilized to ensure the utmost integrity and purity. Each reaction chamber accommodates up to eight mass flow controllers and all plumbing utilizes surface mount, C-seal technology or orbital welded VCR fittings.

Safety - The system meets all SEMI S2-93 safety requirements. A third party safety review is available upon request.

Facilities - Facility schematics can be provided upon request.

Tool Advanced Options

Custom Gas Cabinets - Trion provides remote gas cabinets with self-closing doors, which house gas delivery and purge systems for corrosive or toxic gases controlled by the on-board computer. The system automatically purges the process supply lines with nitrogen when the system is placed in standby mode. This extends the life of the mfc’s, regulators, valves and associated plumbing. Included are automatic “at-the-bottle” shut off valves and stainless steel lecture bottle holders.

Pumping Systems - Each reaction chamber requires its own pump. Trion can supply these as needed according to your requirements. There are mechanical, dry and turbo pump options available. You may choose to provide your own pump(s) or they can be purchased directly from Trion. All pump options provided by Trion are proven systems chosen to best meet your specific process needs.

Temperature Control - For certain processes an external chiller or heater/chiller may be recommended. By controlling the reactor temperature (bottom electrode), process reproducibility is greatly enhanced and the etch by-products more readily volatilized.

Inductively Coupled Plasma - Trion’s ICP is a proven option for applications requiring a downstream, high-density plasma source. It dramatically reduces radiation damage and contamination from RIE sputtering and greatly increases selectivity to other films. It allows for higher plasma densities as power is transferred into the bulk plasma via the magnetic field resultant from inductive coupling. This enables processing at lower pressure, which has a number of significant benefits. It allows for anisotropy in high aspect ratio structures and reduces micro-loading effects. Trion’s ICP source will result in improved etch rates, profile control, uniformity and selectivity with a dramatic reduction in RIE radiation damage.

Crystec Technology Trading GmbH, Germany, www.crystec.com, +49 8671 882173, FAX 882177
Linie

Sirus T2 Table Top Reactive Ion Etch (RIE) System

The Sirus T2 Reactive Ion Etcher is a basic plasma etching system designed to etch dielectrics and other films that require fluorine-based chemistries. The small footprint and robust design make it ideal for the lab environment.

Processes

Processes have been developed for etching Silicon, Silicon Dioxide, Silicon Nitride, Quartz, Polyimide, Tantalum, Tungsten, TiTungsten and other materials that require profile control, high selectivity and good uniformity.

Crystec Technology Trading GmbH est à votre disposition pour vous aider dans la réalisation de vos projets.
Table des Matières	Pour obtenir des informations supplémentaires n'hésitez pas à nous contacter.	Début de page

Trion Technology est representé de
Crystec Technology Trading GmbH