Technology, production, manufacturing and equipment for SiC silicon carbide electronic

SiC Manufacturing Equipment
Crystec Technology Trading GmbH

Production of Silicon Carbide SiC Integrated Circuits ICs

Silicon carbide is a wide band semiconductor material with special properties, which allows operation at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide. Disadvantages are the high costs and the high temperature, required for processing.
The production of integrated circuits is divided into the front-end process for the formation of electronic circuits and in the back-end process for contacting the circuits. Structuring is done by lithographic processes. These are resist coating, exposure, development, process steps such as etching or layer deposition and finally resist removal. We can offer equipment for many production steps for the production of SiC circuits, both for R&D, as well as for mass production.
Very critical are the thermal processes, as for the processing of SiC circuits very high temperature is required, especially for electrical activation of dopants Al, B (p-doping), N or P (n-doping). The furnaces for silicon carbide processing must be able to reach up to 2000░C, while for the production of circuits from silicon or GaAs temperatures up to 1200░C are usually sufficient. Only recently, high temperature vertical furnaces using MoSi
2 heaters or graphite heaters are available in the market.


SiC Transistor Manufacturing

As well as in the production of silicon circuits, the production of SiC circuits consists of lithographic processes, etching and film deposition by sputtering or vapor deposition, and doping and diffusion or activation steps. The temperature requirments are much higher, in the range of 1400░C for LPCVD processes, for the deposition of dielectric layers, oxynitride or oxide from TEOS, or 1800-2000░C for the activation of implanted dopants.

Lithography arrow Mask Aligner
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Etching arrow Plasma Etcher
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Ion Implantation arrow on request
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Activation arrow High Temperature Furnace 2000░C Koyo Thermo Systems
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Oxynitriding arrow High Temperature LPCVD Furnace 1400░C Koyo Thermo Systems
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TEOS-Deposition arrow LPCVD Furnace Koyo Thermo Systems

Contact Forming

Lithography and etching steps are also necessary for the contacting of the circuits. Metal layers are applied and bonded with wires. Annealing steps should be as short as possible and therefore RTP systems are usually used.

Lithography arrow Mask Aligner
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Contact hole formation arrow Plasma Etcher
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PDA (post deposition anneal) Annealing arrow RTP System Koyo Thermo Systems
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Back Side Electrode arrow E-Beam Evaporator or Sputter Tool
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Contact Annealing arrow RTP System 1200░C Koyo Thermo Systems
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Wiring arrow Bonder Fito

We can offer small, manually loaded equipment for research and development, as well as fully automatic machines, working from cassette to cassette, for mass production.

Equipment Pictures

Hochtemperaturofen
Koyo High Temperature Furnace


RTP-Anlage
Koyo RTP System

We are pleased to offer you a suitable system for your application, eventually also used equipment. We can also do test runs for you in the various application centers of our partner companies. Please contact us!