|Technology, production, manufacturing and equipment for SiC silicon carbide electronic.|
Crystec Technology Trading GmbH
Solar LCD MEMS SiC
Silicon carbide is a wide band semiconductor material with special properties, which allows operation
at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high
voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide.
Disadvantages are the high costs and the high temperature, required for processing.
The production of integrated circuits is divided into the front-end process for the formation of electronic circuits and in the back-end process for contacting the circuits. Structuring is done by lithographic processes. These are resist coating, exposure, development, process steps such as etching or layer deposition and finally resist removal. We can offer equipment for many production steps for the production of SiC circuits, both for R&D, as well as for mass production.
Very critical are the thermal processes, as for the processing of SiC circuits very high temperature is required, especially for electrical activation of dopants Al, B (p-doping), N or P (n-doping). The furnaces for silicon carbide processing must be able to reach up to 2000°C, while for the production of circuits from silicon or GaAs temperatures up to 1200°C are usually sufficient. Only recently, high temperature vertical furnaces using MoSi2 heaters or graphite heaters are available in the market.
As well as in the production of silicon circuits, the production of SiC circuits consists of lithographic processes, etching and film deposition by sputtering or vapor deposition, and doping and diffusion or activation steps. The temperature requirments are much higher, in the range of 1400°C for LPCVD processes, for the deposition of dielectric layers, oxynitride or oxide from TEOS, or 1800-2000°C for the activation of implanted dopants.
|Ion Implantation||on request|
|Activation||High Temperature Furnace 2000°C|
|Oxynitriding||High Temperature LPCVD Furnace 1400°C|
Lithography and etching steps are also necessary for the contacting of the circuits. Metal layers are applied and bonded with wires. Annealing steps should be as short as possible and therefore RTP systems are usually used.
|Contact hole formation||Plasma Etcher|
|PDA (post deposition anneal) Annealing||RTP System|
|Back Side Electrode||E-Beam Evaporator or Sputter Tool|
|Contact Annealing||RTP System 1200°C|
We can offer small, manually loaded equipment for research and development, as well as fully automatic machines, working from cassette to cassette, for mass production. We show here some pictures of production systems.
|MIDAS Mask-Aligner MA80||SNTEK Plasma Etcher||SNTEK E-Beam Metal Evaporator||Koyo High Temperature Furnace||Koyo RTP System|
We are pleased to offer you a suitable system for your application, eventually also used equipment. We can also do test runs for you in the various application centers of our partner companies. Please contact us!
|Crystec Technology Trading GmbH will be pleased to further discuss details with you.|
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