Rapid thermal processing RTP and rapid thermal annealing RTA

RTP equipment and RTA systems

RTA (rapid thermal annealing) and RTP (rapid thermal processing) systems use lamp heating to enable fast heating and cooling of semiconductor wafers (silicon, germanium, GaAs, III/V semiconductors, SiC) and glass wafers (on a susceptor). These short-time thermal systems are mainly used where the substrate needs to be brought to a specific temperature only for a short period. High ramp-up and cool-down rates allow short process times and keep the thermal budget (i.e., the total time a wafer is exposed to high temperatures) low. Temperature measurement and control is typically contactless via a pyrometer that converts the wavelength of the emitted light from the sample into temperature. Due to the heater arrangement, RTA/RTP systems are designed as single-wafer tools, i.e., they can process only one wafer at a time. Since process times are generally very short, this is less critical than in vertical or horizontal batch furnaces. However, loading and unloading the chamber still takes a significant portion of the cycle time.
JTEKT (formerly Koyo Thermo Systems) has long experience in producing lamp-heated RTA and RTP systems and is one of the market leaders for such equipment in Asia, although these systems are less well known in Europe compared to other major manufacturers such as Applied Materials and AST / STEAG / Mattson.

Temperature profile of an RTP / RTA system

RTP System Models

Lamp-heated RTP systems

JTEKT Thermo Systems offers several versions of conventional lamp-heated RTP systems: manual units of the RLA-1200 type for research and development, fully automated systems of the RLA-3100 and RLA-3300 series (for 300 mm wafers), and vacuum-loadlock-capable RLA-4100/4200 models.

JTEKT Thermo Systems' RTP systems feature a unique halogen lamp arrangement with two sets of crossed lamps above and below the sample. A patented temperature distribution system results in excellent temperature uniformity and process repeatability while preventing the formation of slip lines.

RLA-1200: Lamp heating system for R&D

The RLA-1200 is a state-of-the-art lamp heating system for 4- to 8-inch wafers that provides outstanding process quality even in demanding R&D environments. Activation and oxidation can be performed in either a vacuum (LP) environment or an N2 load-lock atmosphere. This offers maximum flexibility for a wide range of applications while ensuring precise results and efficient operation.

Key benefits at a glance

High-performance processes tailored for research and development.
Cost-efficiency through manual susceptor transfer.
Innovative crossed lamp arrangement above and below with a deep oven for optimal temperature uniformity.
Flexible for wafer sizes from 4 to 8 inches.
User-friendly high-performance control system for easy operation and precise control.
Vacuum-design quartz tube for exact gas exchange and reliable vacuum processes.

RLA-3100: Advanced lamp-heated system for contact annealing

The RLA-3100 series sets new standards in contact annealing of wafers. With a vacuum load-lock on the process chamber and an N2 load-lock on the transport system, throughput is significantly increased and efficiency maximized. Whether silicon, gallium nitride, or silicon carbide, the system supports a wide range of materials and ensures precise, reproducible results for R&D and production.

Key benefits at a glance

Flexibility with support for wafer sizes up to 8 inches.
Automated susceptor transfer for SiC and GaN wafers — efficient and reliable.
Halogen lamps in an innovative crossed arrangement for uniform temperature distribution.
Precise process control via 6-zone management with individual power regulation.
Non-contact temperature measurement with radiation pyrometers and intelligent feedback control.

RLA-3300: Lamp-heated system for contact annealing (300 mm wafers)

The RLA-3300 is the evolution of the successful RLA-3100, now optimized for 300 mm wafers. The system combines state-of-the-art technologies with high process reliability and offers an excellent cost-benefit ratio. Thanks to its innovative architecture and integrated automation solutions, the RLA-3300 is ideal for demanding R&D and production applications.

Key benefits at a glance

Optimized for 300 mm wafers.
Outstanding uniformity through crossed lamp architecture, 22 zones and wafer rotation.
Reliable wafer handling with multi-axis clean robot for maximum productivity.
Intuitive high-performance controller for easy operation and precise control.
Excellent cost-benefit ratio by purposefully limited feature set.
Integrated 2-FOUP opener with FOUP-axis clean robot for optimized material flow.

RLA-4100-V / RLA-4200-V: Efficiency through vacuum load-lock technology

The RLA-4100-V and RLA-4200-V models offer state-of-the-art lamp heating for contact annealing processes. With vacuum load-locks integrated as standard on the chamber and transport unit, throughput is substantially increased and efficiency maximized. Whether silicon, GaN or SiC — the systems support wafer sizes of 6 to 8 inches and deliver precise, reproducible results for R&D and production. The new 2-chamber design combines optimized transport and cooling sections and achieves up to 2.4× higher productivity compared to the conventional RLA-4200-V.

Key benefits at a glance

High throughput due to vacuum load-lock technology integrated as standard.
Automated susceptor transfer for SiC and GaN wafers — efficient and reliable.
Halogen lamps in a crossed arrangement for even temperature distribution.
Accurate process control via 6-zone management with individual power regulation.
Non-contact temperature measurement with radiation pyrometers and intelligent feedback control.
New 2-chamber model with optimized transport and cooling sections: up to 2.4× productivity versus the RLA-4200-V.

IH-RTP: Inductively heated RTP system

Rapid technical development in the semiconductor industry requires continuous innovation of powerful and cost-effective process tools. To meet these demands, JTEKT Thermo Systems (formerly Koyo Thermo Systems) combined its long experience in thermal processing of wafers with the inductive heating expertise of Mitsui Engineering & Shipbuilding Co., Ltd. (MES). The result is the inductively heated RTP system (IH-RTP) for processing 300 mm and 200 mm wafers.

Key benefits at a glance

Five- to ten-times higher heating rates than resistance-heated batch furnaces (up to 1,000 °C/min).
High temperature uniformity and process stability comparable to conventional furnaces.
Prevents slip formation even at extremely high heating rates.
Ideal for 300 mm production lines requiring high throughput, low thermal budget and low energy consumption.
Especially suitable for high-temperature wet oxidation and annealing of low-k and high-k layers.
Inductive heating system with controller, generator and multiple induction coils for precise energy input.
Automation components for reliable and efficient process flows.

RTP / RTA features and properties

Technical features	Product data
Rapid Thermal Processing	Single-wafer process system with hot-wall reactor chamber and inductive heating. Heating rates up to 1,000 °C/min.
Flexible production	Suitable for production lines with varying demands and small batch sizes. Short process times and efficient production.
Temperature uniformity	Excellent temperature uniformity and repeatability comparable to batch vertical furnaces: 1,000 °C ± 1 °C.
Slip-free process	Optimized wafer supports and uniform heating prevent slip formation.
Energy savings	Demonstrated energy savings up to 30%.
Applications	Activation of dopants, donor killing, densification of deposited films, lattice recovery (e.g., after ion implantation), silicidation and junction formation, high-temperature wet oxidation (RTO), high-k annealing, low-k annealing, copper annealing

JTEKT Thermo Systems and Crystec look forward to building a cost-effective system tailored to your most demanding requirements.