|Thermal treatment and processing of SiC silicon carbide in high temperature furnaces and RTP systems.|
Koyo Thermo Systems Co., Ltd. is represented in Europe by
Diffusion Oxidation H2-Anneal Polyimide Copper low-k polySilicon Nitride TEOS BPSG LPSOG SiC
Silicon carbide is a wide band semiconductor material with special properties, which allows operation
at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high
voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide.
Disadvantages are the high costs and the high temperature, required for processing.
Very critical are the thermal processes for electrical activation of dopants Al, B (p-doping), N or P (n-doping). The furnaces for silicon carbide processing must be able to reach up to 2000°C, while for the production of circuits from silicon or GaAs temperatures up to 1200°C are usually sufficient. Only recently, vertical furnaces using MoSi2 heaters or graphite heaters are available in the market.
As well as in the production of silicon circuits, the production of SiC circuits contains several thermal processes:
Activation of dopants after ion implantation
Thermal oxidation with dry or wet oxygen
Deposition of LPCVD-oxide from TEOS (Tetraethoxysilane)
Deposition of Oxynitride
PDA (post deposition anneal) of evaporated metallic layers
Short term contact annealing
|Activation||High Temperature Furnace||2000°C|
|Oxynitriding||High Temperature LPCVD Furnace||1400°C|
|TEOS-Deposition||High Temperature LPCVD Furnace||1350°C|
|Thermal Oxidation||Vertical Furnace||1200°C|
|PDA (post deposition anneal) Annealing||RTP System||1100°C|
|Contact Annealing||RTP System||1000°C|
Koyo designs and manufactures its own patented heating elements with special properties. Ordered by increasing temperature can Koyo offer the following heaters:
|LGO heater||HGC heater||MoSi2 heater||Carbon heater|
|120°C - 1150°C||400°C - 1250°C||up to 1400°C||up to 2000°C|
We can offer small, manually loaded equipment for research and development, as well as fully automatic machines, working from cassette to cassette, for mass production. We show here some pictures of production systems.
|High temperature furnace for SiC R&D||High temperature furnace for SiC Pilot Line||High temperature furnace for SiC Mass Production||RTP system for SiC R&D||Automatic SiC RTP system|
We are pleased to offer you a suitable system for your application, eventually also used equipment. We can also do test runs for you in the various application centers of our partner companies. Please contact us!
|Crystec Technology Trading GmbH will be pleased to further discuss details with you.|
| Are you interested in further information?
Please contact us!
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