Thermal treatment and processing of SiC silicon carbide in high temperature furnaces and RTP systems.
Koyo Thermo Systems

Koyo Thermo Systems Co., Ltd. is represented in Europe by
Crystec Technology Trading GmbH

Crystec
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Diffusion   Oxidation   H2-Anneal   Polyimide   Copper   low-k   polySilicon   Nitride   TEOS   BPSG   LPSOG   SiC

Production of Silicon Carbide SiC Integrated Circuits ICs

Silicon carbide is a wide band semiconductor material with special properties, which allows operation at high temperature and is is particularly suitable for power semiconductors. The fast and efficient switching of high voltages and currents, high breakdown voltage, good radiation resistivity and high thermal conductivity are the positive properties of silicon carbide. Disadvantages are the high costs and the high temperature, required for processing.
Very critical are the thermal processes for electrical activation of dopants Al, B (p-doping), N or P (n-doping). The furnaces for silicon carbide processing must be able to reach up to 2000C, while for the production of circuits from silicon or GaAs temperatures up to 1200C are usually sufficient. Only recently, vertical furnaces using MoSi
2 heaters or graphite heaters are available in the market.


Thermal Processes in SiC Technology

As well as in the production of silicon circuits, the production of SiC circuits contains several thermal processes:

Activation of dopants after ion implantation

Thermal oxidation with dry or wet oxygen

Deposition of LPCVD-oxide from TEOS (Tetraethoxysilane)

Deposition of Oxynitride

PDA (post deposition anneal) of evaporated metallic layers

Short term contact annealing

Activation arrow High Temperature Furnace 2000C
arrow
Oxynitriding arrow High Temperature LPCVD Furnace 1400C
arrow
TEOS-Deposition arrow High Temperature LPCVD Furnace 1350C
arrow
Thermal Oxidation arrow Vertical Furnace 1200C
arrow
PDA (post deposition anneal) Annealing arrow RTP System 1100C
arrow
Contact Annealing arrow RTP System 1000C

Heizer fr Koyo-fen

Koyo designs and manufactures its own patented heating elements with special properties. Ordered by increasing temperature can Koyo offer the following heaters:

LGO heater HGC heater MoSi2 heater Carbon heater
LGO heater HGC heater MoSi2 heater Carbon heater
120C - 1150C 400C - 1250C up to 1400C up to 2000C

Equipment Pictures

We can offer small, manually loaded equipment for research and development, as well as fully automatic machines, working from cassette to cassette, for mass production. We show here some pictures of production systems.

High temperature furnace for SiC R&D High temperature furnace for SiC Pilot Line High temperature furnace for SiC Mass Production RTP system for SiC R&D automatic SiC RTP system
High temperature furnace for SiC R&D High temperature furnace for SiC Pilot Line High temperature furnace for SiC Mass Production RTP system for SiC R&D Automatic SiC RTP system

We are pleased to offer you a suitable system for your application, eventually also used equipment. We can also do test runs for you in the various application centers of our partner companies. Please contact us!

Crystec Technology Trading GmbH will be pleased to further discuss details with you.
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