PECVD - Plasma Enhanced Chemical Vapor Deposition
SNTEK

SNTEK is represented by
Crystec Technology Trading GmbH

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Plasma Enhanced Chemical Vapor Deposition, PECVD

In semiconductor technology three methods are used for the deposition of layers on semiconductor wafers:
APCVD. Atmospheric Pressure Chemical Vapor Deposition requires rather high temperatures and is used only for very few applications like the formation of epitaxial silicon.
LPCVD. Low Pressure Chemical Vapor Deposition is widely used for the deposition of silicon oxide, nitride and poly-silicon. The process is performed in tube furnaces and requires also rather high temperatures.
PECVD. Plasma Enhanced Chemical Vapor Deposition is mainly used for the deposition of dielectric films and passivation films like silicon oxide or nitride or ONO layers at low temperature. It can be also used for SiC layers of poly-Silicon deposition. The necessary energy for the chemical reaction is not introduced by heating the whole reaction chamber but just by heated gas or plasma. It is the best method, if dopant diffusion has to be kept low, wafers have to be treated, which are sensible to high temperature or have been aluminium metallized already. The thermal budget of the treated wafers stays low with PECVD.
Using an RF generator, the plasma is formed in the reaction chamber. It contains reactive ions and radicals. The growth of the deposit starts easily because of the activation and cleaning of the surface by the more of less intense bombarding with ions from the plasma. You get good adhesion and high growth rates. The properties of the coated layers can be better influenced with PECVD than in simply thermal deposition technique, because more process parameters can be varied. Important are the adjustment of adhesion, compressive and tensile stress causing warpage, hydrogen content and density, etchability, etch rate and selectivity in etching, step coverage as well as stoichiometry (consistence) and cleanliness of the deposited layers, which can be measured by the refractive index. The maximum thickness of the deposit and the best uniformity of the coating is also dependent of the PECVD process parameters. Some film properties can be modified also subsequently.

PECVD-equipment for solar cell manufacturing

For manufacturing of effective silicon solar cells, it is necessary to coat the solar cells with an anti reflective coating ARC in order to increase the light incidence angle. This ARC consists of silicon nitride Si3N4 and is deposited with a continous inline-PECVD system, as it is manufactured by SNTEK.

copntinous PECVD-equipment for anti reflection coating

PECVD-Equipment for R&D

For research and development, also smaller systems are available.

PECVD System PECVD System 2Gen.PECVD System
PECVD System PECVD System 2Gen.PECVD System
PECVD system for deposition of SiO2 layers
Loading Capacity : 2" wafer 32ea
Plasma Source : PE Plasma Type
Source Power : RF 1kW
1 Batch Run Time : 10min
(Process Time : 30sec)
Substrate Size : ~200mm x 200mm
Deposition Direction : upward
Plasma Source : RF or VHF Power Supply
Process Layers : Si3N4, SiO2, Al2O3
Process Temp : ~700C
Layer Uniformity : 3%
Heating Uniformity : 3%
LoadLock System
Full Automation control
Substrate Size :~156mmx156mm 4pcs
Deposition Direction : upward
Plasma Source : RF or VHF Power Supply
Process Layers : Si3N4, SiO2, Al2O3
Process Temp : ~700C
Layer Uniformity : 3%
Heating Uniformity : 3%
LoadLock System
Full Automation control

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