Systeme de dépôt en phase vapeur activé par plasma (PECVD)
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Plasma   gravure de plasma   nettoyage   décapsulation   PECVD   Si3N4   Si02   Extrémité   Graphen   E-Beam   Sputter

Systeme de dépôt en phase vapeur activé par plasma, PECVD

In semiconductor technology three methods are used for the deposition of layers on semiconductor wafers:
APCVD. Atmospheric Pressure Chemical Vapor Deposition requires rather high temperatures and is used only for very few applications like the formation of epitaxial silicon.
LPCVD. Low Pressure Chemical Vapor Deposition is widely used for the deposition of silicon oxide, nitride and poly-silicon. The process is performed in tube furnaces and requires also rather high temperatures.
PECVD. Plasma Enhanced Chemical Vapor Deposition is mainly used for the deposition of dielectric films and passivation films like silicon oxide or nitride or ONO layers at low temperature. It can be also used for SiC layers of poly-Silicon deposition. The necessary energy for the chemical reaction is not introduced by heating the whole reaction chamber but just by heated gas or plasma. It is the best method, if dopant diffusion has to be kept low, wafers have to be treated, which are sensible to high temperature or have been aluminium metallized already. The thermal budget of the treated wafers stays low with PECVD.
Using an RF generator, the plasma is formed in the reaction chamber. It contains reactive ions and radicals. The growth of the deposit starts easily because of the activation and cleaning of the surface by the more of less intense bombarding with ions from the plasma. You get good adhesion and high growth rates. The properties of the coated layers can be better influenced with PECVD than in simply thermal deposition technique, because more process parameters can be varied. Important are the adjustment of adhesion, compressive and tensile stress causing warpage, hydrogen content and density, etchability, etch rate and selectivity in etching, step coverage as well as stoichiometry (consistence) and cleanliness of the deposited layers, which can be measured by the refractive index. The maximum thickness of the deposit and the best uniformity of the coating is also dependent of the PECVD process parameters. Some film properties can be modified also subsequently.

PECVD équipements pour la fabrication de cellules solaires

Pour la fabrication des cellules solaires efficaces au silicium, il est nécessaire de couvrir les cellules solaires d'un revêtement anti-reflet afin d'augmenter l'angle d'incidence de la lumière. Cette couche est constituée de nitrure de silicium Si3N4 et est déposé avec un système PECVD inline-continu.

copntinous PECVD-equipment for anti reflection coating

Équipement PECVD pour R&D de SNTEK

Pour recherche et développement, il ya aussi des machines plus petites.

PECVD System PECVD System 2Gen.PECVD System
PECVD System PECVD System 2Gen.PECVD System
PECVD system for deposition of SiO2 layers
Loading Capacity : 2" wafer 32ea
Plasma Source : PE Plasma Type
Source Power : RF 1kW
1 Batch Run Time : 10min
(Process Time : 30sec)
Substrate Size : ~200mm x 200mm
Deposition Direction : upward
Plasma Source : RF or VHF Power Supply
Process Layers : Si3N4, SiO2, Al2O3
Process Temp : ~700°C
Layer Uniformity : ±3%
Heating Uniformity : ±3%
LoadLock System
Full Automation control
Substrate Size :~156mmx156mm 4pcs
Deposition Direction : upward
Plasma Source : RF or VHF Power Supply
Process Layers : Si3N4, SiO2, Al2O3
Process Temp : ~700°C
Layer Uniformity : ±3%
Heating Uniformity : ±3%
LoadLock System
Full Automation control

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